氮化鎵 (GaN) 功率級 — 在售料號

600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

600-V 50-mΩ GaN with integrated driver and protection

650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

600-V 70mΩ GaN with integrated driver and protection

600-V 150-mΩ GaN with integrated driver and overcurrent protection

650V 105mΩ GaN half-bridge with integrated driver, protection and current sense

600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

650-V 270-mΩ GaN FET with integrated driver and protection

650V 120mΩ GaN FET with integrated driver and protection

600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

100V 4.4mΩ GaN FET with integrated driver

650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

650V 30mΩ GaN FET with integrated driver, protection and zero-current detection

650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense

600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting

100V 2.6mΩ half-bridge gallium nitride (GaN) power stage

600-V 150-mΩ GaN with integrated driver and overcurrent protection

600-V 70mΩ GaN with integrated driver and protection

600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

650V 35mΩ TOLL-packaged GaN FET with integrated driver and protection

600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

650V, 140mΩ GaN half-bridge with integrated driver, protection and current sense

600-V 50-mΩ GaN with integrated driver and protection

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

650V 25mΩ TOLL-packaged GaN FET with integrated driver, protection and zero-voltage detection

600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

650-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

650-V 50-mΩ GaN FET with integrated driver, protection and zero-voltage detection reporting

80V GaN Half Bridge Power Stage

600V 30mΩ GaN FET with integrated driver, protection and zero-current detection

100V 1.7mΩ GaN FET with enhanced integrated driver and protection

650V 140mΩ GaN half bridge with integrated driver, protection and current sensing

600V 50mΩ GaN FET with integrated driver, protection and zero-current detection

Radiation-tolerant, 200V 10A GaN power stage with integrated driver

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

650V 95mΩ GaN half-bridge with integrated driver, protection and current sense

Radiation-tolerant, 200V 10A GaN power stage with integrated driver

600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

100V 2.6mΩ half-bridge gallium nitride (GaN) power stage

650-V 170/248-mΩ GaN half-bridge for ACF with integrated driver, protection and current sense

650V 95mΩ GaN half-bridge with integrated driver, protection and current sense

650V, 230mΩ GaN half-bridge with integrated driver, protection and current sense